ls , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 n-. hannel dual-gate silicon-nitride passivated mos field-effect transistors .. . high yfs depletion mode dual gate transistors designed for vhp amplifier and mixer applications. ? MFE211 ? vhf amplifier/if amplifier mfe212 ? vhf mixer a high forward transfer admittance ? !yfs| = 17-40 mmhos 0 low reverse transfer capacitance ? crsg = 0.03 pp (max) *> diode protected gates maximum ratings rating drain-source voltage drain-gate voltage gate current drain current ? continuous total power dissipation in ta = 25"c derate above 25'c total power dissipation MFE211 mfe212 case to-72 dual-gate mosfets n-channel ? depletion electrical characteristics (ta = 25c unless otherwise noted.l | symbol | mln | mm j unit characteristic off characteristics drain-source breakdown voltage (id - louadc. vqis - vg2s = -".ovdcl gate 1 ? source breakdown voltage(l) iig1 - - 10 madc, vg2s - vds ' l gate 2 ? source breakdown voltageo) ug2 = 10madc, vg1s = vds - l gate 1 to source cutoff voltage mfe21 1 (vds ? 15 vdc. vg2s = 1.0 vdc, id = 20 padc) mfe212 gate 2 to source cutoff voltage mfe21 1 ivrjs =? t5vdc,vgls - 0, id . 20(iadc) mfe212 gate 1 leakage cbrrent wgis - =5.0 vdc. vg2s - vds * 01 (vgis = -5-n vdc, vg2s =? vds " ". ta - isoci gate 2 leakage current ivg2s " * 5.0 vdc. vg1s = vds - ol ivg2s = -5.0 vdc, vgis = vds = . ta = 15o-ci on characteristics tero-gate voltage drain currerit{2) ivds . 15 vdc. vg1s - 0, vq2s * 4.0vdcl vibridsx v(brig1so v(br)g2so vqis(off| vg2s(offl igiss 'g2ss 20 6.0 6.0 -0.5 -0.5 -0.2 -0.2 - - ? ? ? -s.s -4.0 -2.5 -4.0 10 10 10 -10 vdc vdc vdc vdc vdc madc madc nadc padc idss 6.0 | 40 1 madc small-signal characteristics forward transfer admittance^) (vos =? '5 vdc. vg2s ? 4.0 vdc, vnis - 0, f -- l 0 khz) reverse transfer capacitanr.e (vds = ''5 vdc, vq2s " 4.0 vdc, ip - 10 madc, f - 1,0 mhjl ivfsl c,,s n 0.005 40 0.05 mrnhos pf nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. qualify semi-conductors
electrical characteristics iconlinuedl ita =. 25'c unleis mrmwii* notud.l chncurtetic | symbol | functional characteristics noise figure won - is v mfezh (vpp * 24 vdc. vgq - 6.0 vdc. f - 45 mhz) (figure 2) mfe212 common source power gam |vdd - 18 vdc. vgg - ? vdc, f - 20 mhl> (f'tgun 11 MFE211 (vdd - 18 vac, vgg " 6- vdc- < ? 45 mhzl (figure 31 MFE211 (vfjd = 18 vdc, fl0 = ms mhi. fhf = 200 mhz) (figure 3) mfe212 bandwidth (vdd = is vdc. vgg ? 7 o vdc, f = 200 mhz) ingu? n mfezii (vdd - 18 vdc, ilo ? z?s mhz, fnf ? zoo mhz) (figure 31 mfe212 (vdd = 18 vdc, vgg - 6.0 vdc, f - 45mhz) (figure 2) MFE211 gain control gete-supply voltage(4) (vdd - 18 vdc. agp, - -30 db. f - 200 mhz) (figure 1) MFE211 (vrjp = 18 vdc, agps " -30 db. ( - 45 mhz) (figure 21 MFE211 mf eps gcis) bw vgelec) - 24 29 21 e.o 4.0 3.5 3.5 4.0 35 37 28 12 7.0 6.0 -20 1.0 db db mhz vdc 1. all gain breakdown voltages are meaiured while the device is conducting rated gate currant. this ensures that the gate-voltage limiting network is functioning properly. ? 2. pulse test: pulse width - 300 us. duty cycle -~ 2.0%. 3. tnis parameter must be menourad with bias voltages applied for ibs* ttum 5 seconds to avoid overheating. the signal is applied id gate i with gate 2 a bc ground. 4 agps is defined as the change in gps from the vetle 3! vqg " 7'c vks (mfe217), 5, powqi gain conversion, amplitude at input from local oscillator is adjusted for maximum gc, 470 pf t- 1 470 pf 1 1 jz.zmh 0 001 j?f l-b^h^r-^f?f-lr -li^h^i k town load cl. c2 & c3: leadless disc ceramic, 0.001 c4: arco 462. 5-bo pf. or equivalent l1: 3 turns #1b, 3/16" diameter aluminum slug l2: 8 turns #20, 3'16" diameter aluminum slug 1. zoo mhz power gain, gain control voltage, and noise figure test circuit for MFE211 vgg cl: leadless disc ceramic, o.odl ^f c2: leadless disc ceramic, 0.01 /if l1: 8 turns i?28, 5/32" diameter form, type "j" slug l2. 9 turns #28, s/32" diameter form, type "j" slug
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